High Quality Graphene Grown by Sublimation on 4H-SiC (0001)

被引：10
|
作者：
Lebedev, A. A. [1 ]
Davydov, V. Yu. [1 ]
Usachov, D. Yu. [2 ]
Lebedev, S. P. [3 ]
Smirnov, A. N. [1 ]
Eliseyev, I. A. [1 ]
Dunaevskiy, M. S. [1 ]
Gushchina, E. V. [1 ]
Bokai, K. A. [2 ]
Pezoldt, J. [4 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] St Petersburg State Univ, St Petersburg 199034, Russia
[3] ITMO Univ, St Petersburg 197101, Russia
[4] Tech Univ Ilmenau, D-98693 Ilmenau, Germany
来源：
SEMICONDUCTORS | 2018年 / 52卷 / 14期
关键词：
D O I：
10.1134/S1063782618140154
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The structural and electronic characteristics of epitaxial graphene films grown by thermal decomposition of the Si face of a semi-insulating 4H-SiC substrate in an argon environment have been studied by a large set of analytical techniques. It is shown that the results of a complex study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films. The charge-carrier concentration in the graphene layer was within 7 x 10(11)-1 x 10(12) cm(-2), and the maximum mobility of electrons at room temperature approached 6000 cm(2)/(V s).
引用
收藏
页码：1882 / 1885
页数：4
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