Graphene Epitaxially Grown on Vicinal 4H-SiC(0001) Substrates

被引：2

作者：

Ye, M. ^{[1
]}

Cui, Y. T. ^{[2
]}

Qiao, S. ^{[3
,4
]}

Kimura, A. ^{[1
]}

Sawada, M. ^{[2
]}

Namatame, H. ^{[2
]}

Taniguchi, M. ^{[1
]}

机构：

[1] Hiroshima Univ, Grad Sch Sci, Higashi, Hiroshima 7390046, Japan

[2] Hiroshima Univ, HSRC, Higashi, Hiroshima 7390046, Japan

[3] Fudan Univ, Dept Phys, Shanghai, Peoples R China

[4] Fudan Univ, Adv Mat Lab, Shanghai, Peoples R China

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2009年 / 7卷

关键词：

Graphene nano-ribbon; Edge states; Scanning tunneling microscopy; Silicon carbide; Spintronics;

D O I：

10.1380/ejssnt.2009.29

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth mode of graphene epitaxially grown on vicinal SiC(0001) substrates as well as on-axis SiC( 0001) surface has been investigated by scanning tunneling microscopy and low energy electron diffraction. The results show that the graphene favors to start to emerge from the edge of the surface steps, forming narrow graphene domains at the step edges on the vicinal surface with 4 degrees off-axis angle, well separated by carbon rich ( 6 root 3x6 root 3) domains, suggesting the possibility of obtaining graphene nano-ribbons. The graphene film grown on vicinal surface with larger off-axis angle (21 degrees) shows a wave-like morphology, exhibiting the continuity of graphene film across the step edges.

引用

页码：29 / 34

页数：6

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