Edge states of epitaxially grown graphene on 4H-SiC(0001) studied by scanning tunneling microscopy

被引：15
|
作者：
Ye, M. [1 ]
Cui, Y. T. [2 ]
Nishimura, Y. [1 ]
Yamada, Y. [1 ]
Qiao, S. [3 ,4 ]
Kimura, A. [1 ]
Nakatake, M. [2 ]
Namatame, H. [2 ]
Taniguchi, M. [1 ,2 ]
机构：
[1] Hiroshima Univ, Grad Sch Sci, Higashihiroshima 7398526, Japan
[2] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7390046, Japan
[3] Fudan Univ, Dept Phys, Adv Mat Lab, Shanghai 200433, Peoples R China
[4] Fudan Univ, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China
来源：
EUROPEAN PHYSICAL JOURNAL B | 2010年 / 75卷 / 01期
关键词：
GRAPHITE; GAS;
D O I：
10.1140/epjb/e2010-00044-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The edge properties of single layer graphene epitaxially grown on partially graphitized 4H-SiC(0001) surface have been investigated with scanning tunneling microscopy (STM). We directly observed the atomic-structure dependency of the super structures in the vicinity of armchair and zigzag edges due to the different kinds of symmetry-breaking at those two edges.
引用
收藏
页码：31 / 35
页数：5
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