Simulation study of dimensional effect on bipolar resistive random access memory

被引：1
|
作者：
Liu Kai [1 ]
Zhang Kailiang [1 ]
Wang Fang [1 ,2 ]
Zhao Jinshi [1 ]
Wei Jun [3 ]
机构：
[1] Tianjin Univ Technol, Sch Elect Informat Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China
[2] Tianjin Univ, Tianjin 300072, Peoples R China
[3] Singapore Inst Mfg Technol, Singapore 638075, Singapore
来源：
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2014年 / 11卷 / 1-4期
基金：
中国国家自然科学基金;
关键词：
RRAM; power consumption; electric parameter; computational simulation; nanotechnology;
D O I：
10.1504/IJNT.2014.059813
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The dependency of the RRAM device electrical parameters such as set voltage, reset current and resistance on the RRAM cell dimensional scalability is investigated with Monte Carlo simulation to optimise the power consumption of bipolar RRAM. It is found in the simulation that the switching process in bipolar RRAM is related to the cell dimension in the region of 10 nm to 100 nm in terms of its horizontal length. The suppressing effect of existing conducting filament is also discussed. With optimal cell size sufficient initial resistance and a low forming voltage will be achieved, accelerating the feasibility of the high-density low-power RRAM.
引用
收藏
页码：97 / 105
页数：9
相关论文
共 50 条
  • [41] Operation methods of resistive random access memory
    GuoMing Wang
    ShiBing Long
    MeiYun Zhang
    Yang Li
    XiaoXin Xu
    HongTao Liu
    Ming Wang
    PengXiao Sun
    HaiTao Sun
    Qi Liu
    HangBing Lü
    BaoHe Yang
    Ming Liu
    [J]. Science China Technological Sciences, 2014, 57 : 2295 - 2304
  • [42] Operation methods of resistive random access memory
    WANG Guo Ming
    LONG Shi Bing
    ZHANG Mei Yun
    LI Yang
    XU Xiao Xin
    LIU Hong Tao
    WANG Ming
    SUN Peng Xiao
    SUN Hai Tao
    LIU Qi
    L Hang Bing
    YANG Bao He
    LIU Ming
    [J]. Science China(Technological Sciences), 2014, (12) : 2295 - 2304
  • [43] An overview of resistive random access memory devices
    LI YingTao 1
    2 Laboratory of Nano-Fabrication and Novel Device Integration
    [J]. Science Bulletin, 2011, (Z2) : 3072 - 3078
  • [44] Operation methods of resistive random access memory
    WANG Guo Ming
    LONG Shi Bing
    ZHANG Mei Yun
    LI Yang
    XU Xiao Xin
    LIU Hong Tao
    WANG Ming
    SUN Peng Xiao
    SUN Hai Tao
    LIU Qi
    Lü Hang Bing
    YANG Bao He
    LIU Ming
    [J]. Science China Technological Sciences, 2014, 57 (12) : 2295 - 2304
  • [45] Conductance Quantization in Resistive Random Access Memory
    Li, Yang
    Long, Shibing
    Liu, Yang
    Hu, Chen
    Teng, Jiao
    Liu, Qi
    Lv, Hangbing
    Sune, Jordi
    Liu, Ming
    [J]. NANOSCALE RESEARCH LETTERS, 2015, 10
  • [46] All Nonmetal Resistive Random Access Memory
    Te Jui Yen
    Andrei Gismatulin
    Vladimir Volodin
    Vladimir Gritsenko
    Albert Chin
    [J]. Scientific Reports, 9
  • [47] An overview of resistive random access memory devices
    Li YingTao
    Long ShiBing
    Liu Qi
    Lu HangBing
    Liu Su
    Liu Ming
    [J]. CHINESE SCIENCE BULLETIN, 2011, 56 (28-29): : 3072 - 3078
  • [48] Operation methods of resistive random access memory
    Wang GuoMing
    Long ShiBing
    Zhang MeiYun
    Li Yang
    Xu XiaoXin
    Liu HongTao
    Wang Ming
    Sun PengXiao
    Sun HaiTao
    Liu Qi
    Lu HangBing
    Yang BaoHe
    Liu Ming
    [J]. SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2014, 57 (12) : 2295 - 2304
  • [49] Study on the Effect of Hf Oxide Film Sputtering Condition on Resistive Random Access Memory Properties
    Azuma, A.
    Nakajima, R.
    Yoshida, H.
    Shimizu, T.
    Ito, T.
    Shingubara, S.
    [J]. 2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018), 2018, : 322 - 324
  • [50] One bipolar transistor selector - One resistive random access memory device for cross bar memory array
    Aluguri, R.
    Kumar, D.
    Simanjuntak, F. M.
    Tseng, T. Y.
    [J]. AIP ADVANCES, 2017, 7 (09):
12345