Low-threshold 1.3-μm InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

被引：6
|
作者：
Yang, X [1 ]
Heroux, JB [1 ]
Jurkovic, MJ [1 ]
Wang, WI [1 ]
机构：
[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 02期
关键词：
characteristic temperature; InGaAsN; MBE; optical fiber communication; quantum-well lasers; semiconductor lasers;
D O I：
10.1109/68.823492
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
1.3-mu m InGaAsN: Sb-GaAs single-quantum-well laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. A record low threshold of 1.02 kA/cm(2) and a slope efficiency of 0.12 W/A are obtained for broad-area laser diodes under pulsed operation at room temperature. A characteristic temperature of 64 K and a lasing wavelength temperature dependence of 0.38 mm/degrees C are reported.
引用
收藏
页码：128 / 130
页数：3
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