Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant

被引：0
|
作者：
Yang, X [1 ]
Jurkovic, MJ [1 ]
Heroux, JB [1 ]
Wang, WI [1 ]
机构：
[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 13期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Long wavelength InGaAsN/GaAs single quantum well (SQW) laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. A record low threshold current density of 1.47kA/cm(2) and a quantum efficiency of 0.11W/A are reported for broad area laser diodes (LDs) operating at a wavelength of 1.275 mu m under pulsed operation at room temperature.
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页码：1082 / 1083
页数：2
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