High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy

被引：57
|
作者：
Yang, X [1 ]
Heroux, JB [1 ]
Jurkovic, MJ [1 ]
Wang, WI [1 ]
机构：
[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 07期
关键词：
D O I：
10.1063/1.125587
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
1.3 mu m InGaAsN:Sb/GaAs multiple-quantum-well laser diodes have been grown by solid-source molecular-beam epitaxy using Sb as a surfactant. A low threshold of 1.1 kA/cm(2) was achieved for broad-area laser diodes under pulsed operation at room temperature. High-temperature device characterization revealed characteristic temperatures (T-0) of 92 and 54 K for operating temperatures below and above 75 degrees C, respectively, as well as a lasing-wavelength temperature dependence of 0.36 nm/degrees C. (C) 2000 American Institute of Physics. [S0003-6951(00)00107-8].
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收藏
页码：795 / 797
页数：3
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