Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy

被引：10

作者：

Hsiao, RS

Wang, JS ^{[1
]}

Lin, KF

Wei, L

Liu, HY

Liang, CY

Lai, CM

Kovsh, AR

Maleev, NA

Chi, JY

Chen, JF

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan

[3] Ind Technol Res Inst, Hsinchu 310, Taiwan

[4] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 12A期

关键词：

InGaAsN/GaAs quantum wells; vertical cavity surface emitting lasers; molecular beam epitaxy;

D O I：

10.1143/JJAP.43.L1555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth by molecular-beam-epitaxy of high-quality 1.3 mum InGaAsN/GaAs quantum wells (QW) intra-cavity contacted vertical cavity surface emitting lasers (VCSELs) was demonstrated. Low-temperature growth, which suppresses the phase separation significantly improves material quality in the active region. Room-temperature continuous wave (RT-CW) single mode output power of 0.75 mW with an initial slope efficiency of 0.17 W/A and a side mode suppression ratio of 40 dB at a lasing wavelength of as long as 1304 nm were obtained.

引用

页码：L1555 / L1557

页数：3

共 50 条

[1] 1.3 μm InGaAsN quantum well vertical cavity surface emitting lasers on GaAs substrates
Klem, JF
Choquette, KD
Fischer, AJ
Blum, O
Geib, KM
Naone, RL
Galt, D
[J]. LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2, 2000, : 127 - 128
[2] High performance 1.3 μm InGaAsN:Sb/GaAs quantum well lasers grown by molecular beam epitaxy
Yang, X
Heroux, JB
Jurkovic, MJ
Wang, WI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03): : 1484 - 1487
[3] 1.3 μm InGaAsN vertical cavity surface emitting lasers grown by MOCVD
Takeuchi, T
Chang, YL
Leary, M
Tandon, A
Luan, HC
Bour, D
Corzine, S
Twist, R
Tan, M
[J]. ELECTRONICS LETTERS, 2002, 38 (23) : 1438 - 1440
[4] Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 μm
Wang, JS
Hsiao, RS
Lin, G
Lin, KF
Liu, HY
Lai, CM
Wei, L
Liang, CY
Chi, JY
Kovsh, AR
Maleev, NA
Livshits, DA
Chen, JF
Yu, HC
Ustinov, VM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06): : 2663 - 2667
[5] Low-threshold 1.3-μm InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy
Yang, X
Heroux, JB
Jurkovic, MJ
Wang, WI
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (02) : 128 - 130
[6] Al contamination in InGaAsN quantum wells grown by metalorganic chemical vapor deposition and 1.3 μm InGaAsN vertical cavity surface emitting lasers
Takeuchi, T
Chang, YL
Leary, M
Mars, D
Song, YK
Roh, SD
Luan, HC
Mantese, LM
Tandon, A
Twist, R
Belov, S
Bour, D
Tan, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4A): : 1260 - 1263
[7] High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy
Yang, X
Heroux, JB
Jurkovic, MJ
Wang, WI
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (07) : 795 - 797
[8] Strained InGaAs quantum well vertical cavity surface emitting lasers emitting at 1.3 μm
Pougeoise, E.
Gilet, Ph.
Grosse, Ph.
Poncet, S.
Chelnokov, A.
Gerard, J. -M.
Bourgeois, G.
Stevens, R.
Hamelin, R.
Hammar, M.
Berggren, J.
Sundgren, P.
[J]. ELECTRONICS LETTERS, 2006, 42 (10) : 584 - 586
[9] Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm
Choquette, KD
Klem, JF
Fischer, AJ
Blum, O
Allerman, AA
Fritz, IJ
Kurtz, SR
Breiland, WG
Sieg, R
Geib, KM
Scott, JW
Naone, RL
[J]. ELECTRONICS LETTERS, 2000, 36 (16) : 1388 - 1390
[10] Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant
Yang, X
Jurkovic, MJ
Heroux, JB
Wang, WI
[J]. ELECTRONICS LETTERS, 1999, 35 (13) : 1082 - 1083

← 1 2 3 4 5 →