Low-threshold 1.3-µm injection lasers based on single InGaAsN quantum wells

被引：0
|
作者：
V. A. Odnoblyudov
A. Yu. Egorov
M. M. Kulagina
N. A. Maleev
Yu. M. Shernyakov
E. V. Nikitina
V. M. Ustinov
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2004年 / 38卷
关键词：
GaAs; Active Region; Magnetic Material; Electromagnetism; Barrier Layer;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The design of the active region in InGaAsN quantum well (QW) injection lasers is investigated. Long-wavelength (1.27–1.3 mm), low-threshold (<400 A/cm2), and high-efficiency (>50%) lasing is obtained at room temperature from structures based on single InGaAsN QWs in GaAs or InGaAsN barrier layers. The principal parameters (threshold, temperature, power) of these lasers have been studied in the wide-stripe configuration. The characteristics of injection lasers with different designs of the active region are compared.
引用
下载
收藏
页码：607 / 609
页数：2
相关论文
共 50 条
  • [1] Low-threshold 1.3-μm injection lasers based on single InGaAsN quantum wells
    Odnoblyudov, VA
    Egorov, AY
    Kulagina, MM
    Maleev, NA
    Shernyakov, YM
    Nikitina, EV
    Ustinov, VM
    SEMICONDUCTORS, 2004, 38 (05) : 607 - 609
  • [2] Low-threshold 1.3-μm InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy
    Yang, X
    Heroux, JB
    Jurkovic, MJ
    Wang, WI
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (02) : 128 - 130
  • [3] Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers
    Gokhale, MR
    Studenkov, PV
    Wei, J
    Forrest, SR
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (02) : 131 - 133
  • [4] Low-Threshold Epitaxially Grown 1.3-μm InAs Quantum Dot Lasers on Patterned (001) Si
    Shang, Chen
    Wang, Yating
    Norman, Justin C.
    Collins, Noelle
    MacFarlane, Ian
    Dumont, Mario
    Liu, Songtao
    Li, Qiang
    Lau, Kei M.
    Gossard, Arthur C.
    Bowers, John E.
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2019, 25 (06)
  • [5] Low-threshold 1.3-μm GaInNAs quantum-well lasers using quaternary-barrier structures
    Jin, C. Y.
    Liu, H. Y.
    Zhang, S. Y.
    Hopkinson, M.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (9-12) : 942 - 944
  • [6] Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-μm quantum-dot lasers
    Marko, IP
    Adams, AR
    Sweeney, SJ
    Mowbray, DJ
    Skolnick, MS
    Liu, HYY
    Groom, KM
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2005, 11 (05) : 1041 - 1047
  • [7] Low-threshold operation of 1.3-μm GaAsSb quantum-well lasers directly grown on GaAs substrates
    Yamada, M
    Anan, T
    Tokutome, K
    Kamei, A
    Nishi, K
    Sugou, S
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (07) : 774 - 776
  • [8] Gain and threshold properties of InGaAsN/GaAsN material system for 1.3-μm semiconductor lasers
    Yen, Sheng-Horng
    Chen, Mel-Ling
    Kuo, Yen-Kuang
    OPTICS AND LASER TECHNOLOGY, 2007, 39 (07): : 1432 - 1436
  • [9] Low-threshold oxide-confined 1.3-μm quantum-dot laser
    Par, G
    Shchekin, OB
    Huffaker, DL
    Deppe, DG
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (03) : 230 - 232
  • [10] Continuous-wave low-threshold performance of 1.3-μm InGaAs-GaAs quantum-dot lasers
    Huffaker, DL
    Park, G
    Zou, ZZ
    Shchekin, OB
    Deppe, DG
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (03) : 452 - 461
12345