Low-threshold 1.3-µm injection lasers based on single InGaAsN quantum wells

被引：0
|
作者：
V. A. Odnoblyudov
A. Yu. Egorov
M. M. Kulagina
N. A. Maleev
Yu. M. Shernyakov
E. V. Nikitina
V. M. Ustinov
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2004年 / 38卷
关键词：
GaAs; Active Region; Magnetic Material; Electromagnetism; Barrier Layer;
D O I：
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中图分类号：
学科分类号：
摘要：
The design of the active region in InGaAsN quantum well (QW) injection lasers is investigated. Long-wavelength (1.27–1.3 mm), low-threshold (<400 A/cm2), and high-efficiency (>50%) lasing is obtained at room temperature from structures based on single InGaAsN QWs in GaAs or InGaAsN barrier layers. The principal parameters (threshold, temperature, power) of these lasers have been studied in the wide-stripe configuration. The characteristics of injection lasers with different designs of the active region are compared.
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页码：607 / 609
页数：2
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