Developing a systematic approach to metal gates and high-k dielectrics in future-generation CMOS

被引：0
|
作者：
Majhi, Prashant [1 ]
Wen, Huang-Chun [1 ]
Alshareef, Husam [1 ]
Harris, H. Rusty [1 ]
Luan, Hongfa [1 ]
Choi, Kisik [1 ]
Park, C. S. [1 ]
Song, Seung-Chul [1 ]
Lee, Byoung Hun [1 ]
Jammy, Raj [1 ]
机构：
[1] SEMATECH, Austin, TX 78741 USA
来源：
MICRO | 2006年 / 24卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sematech researchers present a terraced-oxide method for extracting the effective work function of metal gates in an effort to integrate metal gates and high-k dielectrics in CMOS devices.
引用
收藏
页码：25 / 32
页数：8
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