Developing a systematic approach to metal gates and high-k dielectrics in future-generation CMOS

被引：0

作者：

Majhi, Prashant ^{[1
]}

Wen, Huang-Chun ^{[1
]}

Alshareef, Husam ^{[1
]}

Harris, H. Rusty ^{[1
]}

Luan, Hongfa ^{[1
]}

Choi, Kisik ^{[1
]}

Park, C. S. ^{[1
]}

Song, Seung-Chul ^{[1
]}

Lee, Byoung Hun ^{[1
]}

Jammy, Raj ^{[1
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

来源：

MICRO | 2006年 / 24卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sematech researchers present a terraced-oxide method for extracting the effective work function of metal gates in an effort to integrate metal gates and high-k dielectrics in CMOS devices.

引用

页码：25 / 32

页数：8

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