Polarity-dependent emission and conversion characteristics of GaN-based thermionic cathodes

被引：0
|
作者：
Kimura, Shigeya [1 ]
Yoshida, Hisashi [1 ]
Miyazaki, Hisao [1 ]
Ito, Takeshi [2 ]
Ogino, Akihisa [2 ]
机构：
[1] Toshiba Co Ltd, Res & Dev Ctr, Kawasaki, Kanagawa, Japan
[2] Shizuoka Univ, Grad Sch Integrated Sci & Technol, Naka Ku, Hamamatsu, Shizuoka, Japan
来源：
2020 33RD INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2018年
关键词：
GaN; polarity; Cs; thermionic emission; thermionic converter;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We observed the polarity-dependent thermionic emission and conversion characteristics of Si-doped n-type GaN-based cathodes with Cs adsorbed on their surfaces. Emission current from the surface of the GaN sample with N-polarity was markedly higher than that with Ga-polarity. We consider that the N-polarity enhanced the surface potential lowering for electrons due to the Cs atom adsorption. These results indicate that, from the viewpoint of a thermionic converter, the electromotive force for emission was higher for N-polarity compared with Ga-polarity.
引用
收藏
页码：31 / 32
页数：2
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