Noise characteristics of GaN-Based IMPATTs

被引：25
|
作者：
Panda, AK [1 ]
Pavlidis, D [1 ]
Alekseev, EA [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 07期
关键词：
gallium nitride; high-frequency; impact ionization; IMPATT diodes; noise; wurtzite phase; zinc-blende phase;
D O I：
10.1109/16.930669
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The potential of noise characteristics of Wt-phase and Znb-phase GaN IMPATTs is investigated and compared to Si, GaN-based IMPATTs at D-band. The noise of GaN-based IMPATTs is found to be higher than that of GaAs-based IMPATTs but equivalent to Si-based IMPATTs. For increased operation temperature, the noise is found to decrease.
引用
收藏
页码：1473 / 1475
页数：3
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