Low frequency noise in GaN-based transistors

被引：0

作者：

Rumyantsev, SL ^{[1
]}

Pala, N ^{[1
]}

Shur, MS ^{[1
]}

Levinshtein, ME ^{[1
]}

Gaska, R ^{[1
]}

Hu, X ^{[1
]}

Yang, J ^{[1
]}

Simin, G ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst, Troy, NY 12180 USA

来源：

2000 IEEE/CORNELL CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/CORNEL.2000.902547

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-frequency noise in GaN/AlGaN Heterostructure Field Effect Transistors (HFETs) Metal-Oxide-Semiconductor HFETs (MOS-HFETs), Metal Semiconductor Field Effect Transistors (MESFETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) was measured at room and elevated temperatures as function of gate and drain voltages. Local levels with a large activation energy E-a similar to 0.8 - 1.0 eV have been observed in the measurement results. The noise might come from thin (30nm) AlGaN barrier layer. The estimates of the level parameters based on this assumption resulted in reasonable values of capture cross section sigma (n) approximate to (10(-12) - 10(-13)) cm(2).

引用

页码：257 / 264

页数：8

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