Enhancement of thermionic emission and conversion characteristics using polarization- and band-engineered n-type AlGaN/GaN cathodes

被引：4

作者：

Kimura, Shigeya ^{[1
]}

Yoshida, Hisashi ^{[1
]}

Miyazaki, Hisao ^{[1
]}

Fujimoto, Takuya ^{[2
]}

Ogino, Akihisa ^{[2
]}

机构：

[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128582, Japan

[2] Shizuoka Univ, Grad Sch Integrated Sci & Technol, Naka Ku, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328561, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2021年 / 39卷 / 06期

关键词：

GAN;

D O I：

10.1116/6.0001357

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Enhanced thermionic emission (TE) and conversion characteristics are observed by controlling spontaneous and piezoelectric polarization and the band diagram of n-type AlGaN/GaN thermionic cathodes. Reduction in the electron affinity and work function by the insertion of an N-polarity thin n-type AlGaN (n-AlGaN) film including tensile biaxial strain is confirmed by an ultraviolet photoemission spectroscopy analysis. The obtained TE current from N-polarity n-AlGaN films grown on an n-type GaN (n-GaN) substrate is 0.29 mA at 500 degrees C in a Cs gas atmosphere in the vacuum gap between the cathode and a stainless steel anode. This TE current is 5.0 times and 1.6 times higher than that from the surface of Ga-polarity n-GaN substrate and that of the Ga-polarity n-AlGaN film on the substrate, respectively. Published under an exclusive license by the AVS.

引用

页数：9

共 14 条

[1] Enhancement of thermionic emission and conversion characteristics using polarization- and band-engineered n-type AlGaN cathodes
Kimura, Shigeya
Yoshida, Hisashi
Miyazaki, Hisao
Fujimoto, Takuya
Ogino, Akihisa
[J]. 2021 34TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2021, : 58 - 59
[2] Surface polarity dependence of thermionic emission and conversion characteristics of n-type GaN cathodes
Kimura, Shigeya
Yoshida, Hisashi
Miyazaki, Hisao
Fujimoto, Takuya
Ogino, Akihisa
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021, 39 (01):
[3] Thermionic emission and conversion properties of n-type AlGaN thin film cathodes grown on 6H-SiC substrates
Kimura, Shigeya
Yoshida, Hisashi
Uchida, Shota
Ogino, Akihisa
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (SG)
[4] Polarity-dependent emission and conversion characteristics of GaN-based thermionic cathodes
Kimura, Shigeya
Yoshida, Hisashi
Miyazaki, Hisao
Ito, Takeshi
Ogino, Akihisa
[J]. 2020 33RD INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2018, : 31 - 32
[5] Surface activation of n-type AlGaN with cesium and oxygen to enhance thermionic emission
Namura, Kai
Kimura, Shigeya
Miyazaki, Hisao
Ogino, Akihisa
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (05)
[6] Efficiency Enhancement of InGaN LEDs With an n-Type AlGaN/GaN/InGaN Current Spreading Layer
Liu, Hsueh-Hsing
Chen, Peng-Ren
Lee, Geng-Yen
Chyi, Jen-Inn
[J]. IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) : 1409 - 1411
[7] DOMINATION OF THE THERMIONIC-FIELD EMISSION IN THE REVERSE IV CHARACTERISTICS OF N-TYPE GAAS SCHOTTKY CONTACTS
HORVATH, ZJ
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) : 6780 - 6784
[8] Electric-Field Enhancement of Electron Emission Rates for Deep-Level Traps in n-type GaN
Markevich, Vladimir P.
Halsall, Matthew P.
Sun, Lijie
Crowe, Iain F.
Peaker, Anthony R.
Kruszewski, Piotr
Plesiewicz, Jerzy
Prystawko, Pawel
Bulka, Sylwester
Jakiela, Rafal
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2023, 260 (08):
[9] Origins of the temperature dependence of the series resistance, ideality factor and barrier height based on the thermionic emission model for n-type GaN Schottky diodes
Lin, Yow-Jon
[J]. THIN SOLID FILMS, 2010, 519 (02) : 829 - 832
[10] A NEW (NON-COPPER-INDUCED) 1.35 EV EMISSION BAND IN N-TYPE GAAS - ORIGIN AND CHARACTERISTICS
GLINCHUK, KD
PROKHOROVICH, AV
ZAYATS, NS
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (02): : 503 - 510

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