Surface polarity dependence of thermionic emission and conversion characteristics of n-type GaN cathodes

被引:3
|
作者
Kimura, Shigeya [1 ]
Yoshida, Hisashi [1 ]
Miyazaki, Hisao [1 ]
Fujimoto, Takuya [2 ]
Ogino, Akihisa [2 ]
机构
[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128582, Japan
[2] Shizuoka Univ, Grad Sch Integrated Sci & Technol, Naka Ku, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328561, Japan
来源
关键词
DIAMOND;
D O I
10.1116/6.0000710
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We observed the polarity-dependent thermionic emission (TE) and conversion characteristics of n-type GaN-based cathodes with Cs adsorbed on their surfaces. TE current from the surface of an n-GaN sample with N-polarity was 0.18mA at an applied anode voltage of 30V at 500 degrees C. This TE current was markedly higher than that of a sample with Ga-polarity, which had a corresponding TE current of 0.063mA. We consider the N-polarity with spontaneous polarization to be the cause of the increase in electron density at the Cs/n-GaN interface. TE current was also detected from both samples with Ga- and N-polarity even when the applied anode voltage was 0V or lower, indicating the presence of thermionic conversion characteristics. From the viewpoint of a thermionic converter, the electromotive force for TE was 0.12V higher when using the N-polarity n-GaN cathode compared with the Ga-polarity cathode. The short-circuit currents at 500 degrees C were 4.8 and 0.97 mu A for the sample with N-polarity and the one with Ga-polarity, respectively.
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页数:7
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