Polarity-dependent effect of humidity on the resistive switching characteristics of nonpolar devices

被引：3
|
作者：
Yin, Qiaonan
Wei, Chunyang
Wei, Qi
Chen, Yan
Xia, Yidong [1 ]
Xu, Bo
Yin, Jiang
Liu, Zhiguo
机构：
[1] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Coll Engn & Appl Sci, Dept Mat Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 10期
基金：
中国国家自然科学基金;
关键词：
MOISTURE; MODEL; MECHANISM; MEMRISTOR; MEMORIES; RESET; FILMS; RRAM;
D O I：
10.7567/APEX.9.104202
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The roles of moisture in resistive switching (RS) devices are closely related to the RS mechanism. In principle, the nonpolar RS promises symmetric behaviors independent of the polarities of operating voltages. However, the effect of humidity on the RS characteristics of Pt/TiO2-x/Pt nonpolar cells is confirmed to be polarity-dependent. The positive electroforming threshold voltage decreases when humidity increases, whereas the negative one is unaffected. This asymmetric phenomenon can be attributed to the polarity-associated rule of current varying with humidity before electroforming. The voltage distribution in the device and then the electroforming threshold voltage are modified. (C) 2016 The Japan Society of Applied Physics
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Revelation on the Interrelated Mechanism of Polarity-Dependent and Multilevel Resistive Switching in TaOx-Based Memory Devices
    Chen, Ying-Chuan
    Chung, Yu-Lung
    Chen, Bo-Tao
    Chen, Wei-Chih
    Chen, Jen-Sue
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (11): : 5758 - 5764
  • [2] POLARITY-DEPENDENT MEMORY SWITCHING IN DEVICES WITH SNSE AND SNSE2 CRYSTALS
    CHUN, D
    WALSER, RM
    BENE, RW
    COURTNEY, TH
    [J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 479 - 481
  • [3] Tunable voltage polarity-dependent resistive switching characteristics by interface energy barrier modulation in ceria-based bilayer memristors for neuromorphic computing
    Moon, Sola
    Park, Kitae
    Chung, Peter Hayoung
    Sahu, Dwipak Prasad
    Yoon, Tae-Sik
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2023, 963
  • [4] Effect of controlled humidity on resistive switching of multilayer VO2 devices
    Raja, Vithaldas
    Hadiyal, Keval
    Nath, Aswini Kumar
    Viannie, Leema Rose
    Sonar, Prashant
    Molina-Reyes, Joel
    Thamankar, R.
    [J]. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2021, 264
  • [5] Polarity-dependent forming in ion bombarded amorphous silicon memory devices
    Gateru, RG
    Orwa, JO
    Shannon, JM
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (02)
  • [6] Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices
    Zhong, L.
    Jiang, L.
    Huang, R.
    de Groot, C. H.
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (09)
  • [7] POLARITY-DEPENDENT ELECTROOPTICAL EFFECT OF NEMATIC LIQUID-CRYSTALS
    HELFRICH, W
    [J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 451 - 452
  • [8] Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices
    Li, Yingtao
    Li, Xiaoyan
    Fu, Liping
    Chen, Rongbo
    Wang, Hong
    Gao, Xiaoping
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (12) : 5390 - 5394
  • [9] Effect of Pd Nanocrystals on Resistive Switching Characteristics in HfOx Memory Devices
    Kang, Tsung-Kuei
    Wang, Chih-Kai
    Yang, Ysung-Yu
    [J]. ADVANCES IN APPLIED MATERIALS AND ELECTRONICS ENGINEERING II, 2013, 684 : 3 - 6
  • [10] ANOMALOUS POLARITY-DEPENDENT ELECTROOPTIC EFFECT IN CUBIC ZNS AND ZNTE
    MYERS, RA
    POWELL, CG
    [J]. APPLIED PHYSICS LETTERS, 1966, 9 (09) : 326 - &
12345