2D electron transport through potential barrier prepared by LAO on shallow GaAs/AlxGa1-xAs/InGaP heterostructure

被引：0

作者：

Martaus, J. ^{[1
]}

Cambel, V. ^{[1
]}

Kudela, R. ^{[1
]}

Gregusova, D. ^{[1
]}

Soltys, J. ^{[1
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, SK-84239 Bratislava, Slovakia

来源：

ASDAM '06: SIXTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS | 2006年

关键词：

D O I：

10.1109/ASDAM.2006.331201

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied transport of a two-dimensional electron gas through a potential barrier prepared on shallow GaAs/AlxGa1-xAs/InGaP heterostructure by local anodic oxidation (LAO) with an AFM tip. The potential barrier height after LAO was 55 me V and it increased to 2 70 me V after oxide line removal at 300 mV, at room temperature. Barriers with this height can be used for room temperature nanometre-sized structures and devices fabrication.

引用

页码：253 / 256

页数：4

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