MODELING OF ELECTRON-TRANSPORT IN REAL SPACE IN GAAS/ALXGA1-XAS HETEROSTRUCTURES (WITH LOW AND HIGH VALUES OF X)

被引：0
|
作者：
VAGIDOV, NZ
GRIBNIKOV, ZS
IVASHCHENKO, VM
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：684 / 689
页数：6
相关论文
共 50 条
  • [1] ELECTRON-TRANSPORT IN GAAS/ALXGA1-XAS HETEROJUNCTIONS AT LOW-TEMPERATURES
    ARTAKI, M
    HESS, K
    SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 383 - 386
  • [2] Electron multiplication in AlxGa1-xAs/GaAs heterostructures
    Chia, CK
    David, JPR
    Rees, GJ
    Robson, PN
    Plimmer, SA
    Grey, R
    APPLIED PHYSICS LETTERS, 1997, 71 (26) : 3877 - 3879
  • [3] Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-xAs with delta-doped barriers. Effect of real-space transfer
    Korotyeyev, V. V.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2015, 18 (01) : 1 - 11
  • [4] MODELING PARALLEL CONDUCTION IN GAAS/ALXGA1-XAS HETEROSTRUCTURES
    HURD, CM
    MCALISTER, SP
    MCKINNON, WR
    STEWART, BR
    DAY, DJ
    MANDEVILLE, P
    SPRINGTHORPE, AJ
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) : 4706 - 4713
  • [5] DETERMINATION OF THE ELECTRON-DENSITY IN GAAS ALXGA1-XAS HETEROSTRUCTURES
    MARTORELL, J
    SPRUNG, DWL
    PHYSICAL REVIEW B, 1994, 49 (19): : 13750 - 13759
  • [6] Electron transport in MIS-like GaAs/AlxGa1-xAs heterostructures with nanostructured gates
    Herfort, J
    Austing, DG
    Hirayama, Y
    SOLID-STATE ELECTRONICS, 1998, 42 (7-8) : 1135 - 1139
  • [7] INTERSUBBAND SCATTERING IN GAAS/ALXGA1-XAS HETEROSTRUCTURES
    DELANGE, W
    BLOM, FAP
    VANHALL, PJ
    KOENRAAD, PM
    WOLTER, JH
    PHYSICA B, 1993, 184 (1-4): : 216 - 220
  • [8] PHOTOREFLECTANCE OF ALXGA1-XAS AND ALXGA1-XAS/GAAS INTERFACES AND HIGH-ELECTRON-MOBILITY TRANSISTORS
    SYDOR, M
    JAHREN, N
    MITCHEL, WC
    LAMPERT, WV
    HAAS, TW
    YEN, MY
    MUDARE, SM
    TOMICH, DH
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (12) : 7423 - 7429
  • [9] Transport in gated undoped GaAs/AlxGa1-xAs heterostructures in the high density and high mobility range
    Herfort, J
    Hirayama, Y
    APPLIED PHYSICS LETTERS, 1996, 69 (22) : 3360 - 3362
  • [10] Transport studies of AlxGa1-xAs/GaAs quantum heterostructures using BEEM
    Narayanamurti, V
    ADVANCES IN SOLID STATE PHYSICS, VOL 35, 1996, 35 : 243 - 256
12345