2D electron transport through potential barrier prepared by LAO on shallow GaAs/AlxGa1-xAs/InGaP heterostructure

被引：0
|
作者：
Martaus, J. [1 ]
Cambel, V. [1 ]
Kudela, R. [1 ]
Gregusova, D. [1 ]
Soltys, J. [1 ]
机构：
[1] Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, SK-84239 Bratislava, Slovakia
来源：
ASDAM '06: SIXTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/ASDAM.2006.331201
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied transport of a two-dimensional electron gas through a potential barrier prepared on shallow GaAs/AlxGa1-xAs/InGaP heterostructure by local anodic oxidation (LAO) with an AFM tip. The potential barrier height after LAO was 55 me V and it increased to 2 70 me V after oxide line removal at 300 mV, at room temperature. Barriers with this height can be used for room temperature nanometre-sized structures and devices fabrication.
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页码：253 / 256
页数：4
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