TWO-DIMENSIONAL ELECTRON GAS AND ANISOTROPY OF TRANSPORT PHENOMENA IN A GaAs-AlxGa1 - xAs HETEROSTRUCTURE.

被引：0
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作者：
Volkov, V.A.
Galchenkov, D.V.
Grodnenskii, I.M.
Elinson, M.I.
Starostin, K.V.
机构：
来源：
Soviet physics. Semiconductors | 1983年 / 17卷 / 02期
关键词：
HALL EFFECT - SEMICONDUCTING GALLIUM ARSENIDE;
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摘要：
The magnetoresistance, Hall coefficient, and Shubnikov-de Haas effect were studied in the case of a selectively doped GaAs-n-Al//xGa//1// minus //xAs heterojunction grown by the liquid epitaxy method. The results obtained were explained by the existence of two electron systems: a two-dimensional system with a high mobility at the heterojunction and a three-dimensional one with a low mobility in the bulk of the semiconductor. The dependence of the magnetoresistance on the angle of inclination of the magnetic field relative to the heterojunction plane could be used as a high-temperature test of the two-dimensional nature of the electron gas in the investigated heterostructure.
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页码：183 / 186
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