Annealing studies on zinc oxide thin films deposited by magnetron sputtering

被引：21

作者：

Yen, Tingfang ^{[1
]}

Strome, Dave ^{[2
]}

Kim, Sung Jin ^{[1
]}

Cartwright, Alexander N. ^{[1
]}

Anderson, Wayne A. ^{[1
]}

机构：

[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

[2] AMBP Tech Corp, Piscataway, NJ 08854 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 05期

关键词：

ZnO; annealing; laser annealing; RTA; nitrogen annealing; metal-semiconductor-metal; photodetector; solar cell; sputtering;

D O I：

10.1007/s11664-007-0357-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Three annealing techniques for ZnO thin films were studied for modifying electrical properties. The stoichiometry of ZnO has a ratio of similar to 1:1 at a depth of 100 angstrom, independent of the annealing method applied. Laser-annealed samples exhibited a larger grain size compared to the other annealing methods and showed an increase in photoluminescence (PL) and a decrease in defects in the ZnO for laser power above 200 mJ/cm(2). Metal-semiconductor-metal photodetectors (MSM-PDs) gave the best responsivity of 606.8 A/W. An SiO2 insulator layer (10 to 20 angstrom) was added between the ZnO and Si to study potential solar cell applications.

引用

页码：764 / 769

页数：6

共 50 条

[1] Annealing Studies on Zinc Oxide Thin Films Deposited by Magnetron Sputtering
Tingfang Yen
Dave Strome
Sung Jin Kim
Alexander N. Cartwright
Wayne A. Anderson
[J]. Journal of Electronic Materials, 2008, 37 : 764 - 769
[2] The influence of annealing temperature on ZnO thin films by oxidating Zinc films deposited with magnetron sputtering
Sun, Haibo
Sun, Zhencui
Xue, Chengshan
[J]. ADVANCED MATERIALS RESEARCH II, PTS 1 AND 2, 2012, 463-464 : 624 - +
[3] Electrical and Optical Properties of Zinc Oxide Thin Films Deposited by Magnetron Sputtering
Ding, Xiaoqin
Lai, Yunfeng
[J]. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), 2011, 34 (01): : 577 - 582
[4] Influence of thermal annealing on microstructures of zinc oxide films deposited by RF magnetron sputtering
Hiramatsu, Takahiro
Furuta, Mamoru
Furuta, Hiroshi
Matsuda, Tokiyoshi
Hirao, Takashi
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (6A): : 3319 - 3323
[5] Influence of Substrate Temperature on the Characteristics of Zinc Oxide Thin Films Deposited by Magnetron Sputtering
Gu, J. H.
Zhong, Z. Y.
He, X.
Hou, J.
Yang, C. Y.
[J]. PROGRESS IN NEW MATERIALS AND MECHANICS RESEARCH, 2012, 502 : 111 - +
[6] Zinc oxide thin films deposited by magnetron sputtering with various oxygen/argon concentrations
Damiani, L. R.
Mansano, R. D.
[J]. 14TH LATIN AMERICAN WORKSHOP ON PLASMA PHYSICS (LAWPP 2011), 2012, 370
[7] Structure Evolution of Zinc Oxide Thin Films Deposited by Unbalance DC Magnetron Sputtering
Aryanto, Didik
Marwoto, Putut
Sudiro, Toto
Birowosuto, Muhammad D.
Sugianto
Sulhadi
[J]. INTERNATIONAL SYMPOSIUM ON CURRENT PROGRESS IN MATHEMATICS AND SCIENCES 2015 (ISCPMS 2015), 2016, 1729
[8] Structural and optical studies of ZnO thin films deposited by rf magnetron sputtering: influence of annealing
Moustaghfir, A
Tomasella, E
Ben Amor, S
Jacquet, M
Cellier, J
Sauvage, T
[J]. SURFACE & COATINGS TECHNOLOGY, 2003, 174 : 193 - 196
[9] Microstructure and optoelectronic properties of galliumtitanium-zinc oxide thin films deposited by magnetron sputtering
陈首部
陆轴
钟志有
龙浩
顾锦华
龙路
[J]. Optoelectronics Letters, 2016, 12 (04) : 280 - 284
[10] Performances presented by zinc oxide thin films deposited by r.f. magnetron sputtering
Nunes, P
Costa, D
Fortunato, E
Martins, R
[J]. VACUUM, 2002, 64 (3-4) : 293 - 297

← 1 2 3 4 5 →