Structure Evolution of Zinc Oxide Thin Films Deposited by Unbalance DC Magnetron Sputtering

被引:6
|
作者
Aryanto, Didik [1 ,3 ]
Marwoto, Putut [2 ,3 ]
Sudiro, Toto [1 ]
Birowosuto, Muhammad D. [1 ,4 ]
Sugianto [2 ,3 ]
Sulhadi [2 ]
机构
[1] Indonesian Inst Sci, Res Ctr Phys, Serpong 15314, Tangerang Selat, Indonesia
[2] Univ Negeri Semarang, Fac Math & Sci, Dept Phys, Semarang, Indonesia
[3] Univ Negeri Semarang, Dept Phys, Mat Res Grp, Semarang 50229, Jawa Tengah, Indonesia
[4] CINTRA UMI, CNRS NTU THALES, 3288 Res Techno Plaza,50 Nanyang Dr, Singapore 637553, Singapore
关键词
PHOTOLUMINESCENCE PROPERTIES; SUBSTRATE-TEMPERATURE; ELECTRICAL-PROPERTIES; ZNO; GA; AL; GROWTH;
D O I
10.1063/1.4946942
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
Zinc oxide (ZnO) thin films are deposited on corning glass substrates using unbalanced DC magnetron sputtering. The effect of growth temperature on surface morphology and crystallographic orientation of ZnO thin film is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The surface morphology and crystallographic orientation of ZnO thin film are transformed against the increasing of growth temperature. The mean grain size of film and the surface roughness are inversely and directly proportional towards the growth temperature from room temperature to 300 degrees C, respectively. The smaller grain size and finer roughness of ZnO thin film are obtained at growth temperature of 400 degrees C. The result of AFM analysis is in good agreement with the result of XRD analysis. ZnO thin films deposited in a series of growth temperatures have hexagonal wurtzite polycrystalline structures and they exhibit transformations in the crystallographic orientation. The results in this study reveal that the growth temperature strongly influences the surface morphology and crystallographic orientation of ZnO thin film.
引用
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页数:5
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