Annealing studies on zinc oxide thin films deposited by magnetron sputtering

被引：21
|
作者：
Yen, Tingfang [1 ]
Strome, Dave [2 ]
Kim, Sung Jin [1 ]
Cartwright, Alexander N. [1 ]
Anderson, Wayne A. [1 ]
机构：
[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA
[2] AMBP Tech Corp, Piscataway, NJ 08854 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 05期
关键词：
ZnO; annealing; laser annealing; RTA; nitrogen annealing; metal-semiconductor-metal; photodetector; solar cell; sputtering;
D O I：
10.1007/s11664-007-0357-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Three annealing techniques for ZnO thin films were studied for modifying electrical properties. The stoichiometry of ZnO has a ratio of similar to 1:1 at a depth of 100 angstrom, independent of the annealing method applied. Laser-annealed samples exhibited a larger grain size compared to the other annealing methods and showed an increase in photoluminescence (PL) and a decrease in defects in the ZnO for laser power above 200 mJ/cm(2). Metal-semiconductor-metal photodetectors (MSM-PDs) gave the best responsivity of 606.8 A/W. An SiO2 insulator layer (10 to 20 angstrom) was added between the ZnO and Si to study potential solar cell applications.
引用
收藏
页码：764 / 769
页数：6
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