Annealing studies on zinc oxide thin films deposited by magnetron sputtering

被引：21

作者：

Yen, Tingfang ^{[1
]}

Strome, Dave ^{[2
]}

Kim, Sung Jin ^{[1
]}

Cartwright, Alexander N. ^{[1
]}

Anderson, Wayne A. ^{[1
]}

机构：

[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

[2] AMBP Tech Corp, Piscataway, NJ 08854 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 05期

关键词：

ZnO; annealing; laser annealing; RTA; nitrogen annealing; metal-semiconductor-metal; photodetector; solar cell; sputtering;

D O I：

10.1007/s11664-007-0357-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Three annealing techniques for ZnO thin films were studied for modifying electrical properties. The stoichiometry of ZnO has a ratio of similar to 1:1 at a depth of 100 angstrom, independent of the annealing method applied. Laser-annealed samples exhibited a larger grain size compared to the other annealing methods and showed an increase in photoluminescence (PL) and a decrease in defects in the ZnO for laser power above 200 mJ/cm(2). Metal-semiconductor-metal photodetectors (MSM-PDs) gave the best responsivity of 606.8 A/W. An SiO2 insulator layer (10 to 20 angstrom) was added between the ZnO and Si to study potential solar cell applications.

引用

页码：764 / 769

页数：6

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