Electrical Characterizations of 35-kV Semi-Insulating Gallium Arsenide Photoconductive Switch

被引：2

作者：

Ma, Cheng ^{[1
]}

Wu, Meilin ^{[1
]}

Wang, Wennan ^{[1
]}

Jia, Yaqiong ^{[1
]}

Shi, Wei ^{[1
]}

机构：

[1] Xian Univ Technol, Key Lab Ultrafast Photoelect Technol & Terahertz, Xian 710048, Peoples R China

来源：

PHOTONICS | 2021年 / 8卷 / 09期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

avalanche mode; low-energy triggering; photoconductive semiconductor switch; SEMICONDUCTOR SWITCH; SURFACE FLASHOVER; JITTER TIME;

D O I：

10.3390/photonics8090385

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, a three-layer GaAs photoconductive semiconductor switch (GaAs PCSS) is designed to withstand high voltage from 20 to 35 kV. The maximum avalanche gain and minimum on-state resistance of GaAs PCSS are 1385 and 0.58 Omega, respectively, which are the highest values reported to date. Finally, the influence of the bias voltage on the avalanche stability is analyzed. The stability of the GaAs PCSS is evaluated and calculated. The results show that the jitter values at the bias voltages of 30 kV and 35 kV are 164.3 ps and 106.9 ps, respectively. This work provides guidance for the design of semiconductor switches with high voltage and high gain.

引用

页数：8

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