PHOTOCONDUCTIVITY IN SEMI-INSULATING GALLIUM ARSENIDE

被引：24

|

作者：

HOLEMAN, BR

HILSUM, C

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1961年 / 22卷

关键词：

D O I：

10.1016/0022-3697(61)90237-2

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

收藏

页码：19 / 24

页数：6

相关论文

共 50 条

[1] OPTICALLY ENHANCED PHOTOCONDUCTIVITY IN SEMI-INSULATING GALLIUM-ARSENIDE
DESNICA, UV
SANTIC, B
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (09) : 810 - 812
[2] PHOTOCONDUCTIVITY OF CHROMIUM-DOPED SEMI-INSULATING GALLIUM ARSENIDE
OMELYANOVSKII, EM
PERVOVA, LY
RASHEVSK.EP
FISTUL, VI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (03): : 484 - +
[3] PHOTOCONDUCTIVITY OF SEMI-INSULATING GALLIUM ARSENIDE IN PRESENCE OF A MAGNETIC FIELD
MILNERBROWN, H
FORTIN, E
[J]. CANADIAN JOURNAL OF PHYSICS, 1969, 47 (24) : 2789 - +
[4] TIME-DEPENDENT PHOTOCONDUCTIVITY IN SEMI-INSULATING GALLIUM-ARSENIDE
QUEISSER, HJ
[J]. ANNALEN DER PHYSIK, 1990, 47 (06) : 461 - 466
[5] IMPURITY CATHODOLUMINESCENCE OF SEMI-INSULATING GALLIUM ARSENIDE
DOMANEVSKII, DS
TKACHEV, VD
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1790 - +
[6] Dielectric spectroscopy of semi-insulating gallium arsenide
Jonscher, AK
Pickup, C
Zaidi, SH
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (01) : 71 - 92
[7] MICROSCOPY OF SEMI-INSULATING GALLIUM-ARSENIDE
AUGUSTUS, PD
STIRLAND, DJ
[J]. JOURNAL OF MICROSCOPY, 1980, 118 (JAN) : 111 - 116
[8] EPITAXIAL GROWTH OF SEMI-INSULATING GALLIUM ARSENIDE
MIZUNO, O
KIKUCHI, S
SEKI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (02) : 208 - +
[9] PHOTOCONDUCTIVITY AND INFRA-RED QUENCHING IN CHROMIUM-DOPED SEMI-INSULATING GALLIUM ARSENIDE
HEATH, DR
SELWAY, PR
TOOKE, CC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (01) : 29 - &
[10] SELECTIVE ETCHING OF SEMI-INSULATING GALLIUM-ARSENIDE
GREENE, PD
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (09) : 815 - &

← 1 2 3 4 5 →