EPITAXIAL GROWTH OF SEMI-INSULATING GALLIUM ARSENIDE

被引：18

|

作者：

MIZUNO, O

KIKUCHI, S

SEKI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 02期

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D O I：

10.1143/JJAP.10.208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：208 / +

页数：1

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