PREPARATION OF EPITAXIAL SEMI-INSULATING GALLIUM ARSENIDE BY IRON DOPING

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作者：

HOYT, PL

HAISTY, RW

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1965年 / 112卷 / 07期

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O646 [电化学、电解、磁化学];

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081704 ;

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页码：C147 / &

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