ELECTRICAL COMPENSATION IN SEMI-INSULATING GALLIUM-ARSENIDE

被引：36

作者：

BROZEL, MR ^{[1
]}

BUTLER, J ^{[1
]}

NEWMAN, RC ^{[1
]}

RITSON, A ^{[1
]}

STIRLAND, DJ ^{[1
]}

WHITEHEAD, C ^{[1
]}

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTONSHIR,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 09期

关键词：

D O I：

10.1088/0022-3719/11/9/023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

下载

页码：1857 / 1863

页数：7

共 50 条

[1] MICROSCOPY OF SEMI-INSULATING GALLIUM-ARSENIDE
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[2] MECHANISM OF COMPENSATION OF IRON-DOPED SEMI-INSULATING GALLIUM-ARSENIDE
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[10] DISTRIBUTION MEASUREMENT OF THE ELECTRICAL-PROPERTIES OF SEMI-INSULATING GALLIUM-ARSENIDE MONOCRYSTALS
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