Two photon absorption in semi-insulating gallium arsenide photoconductive switch irradiated by a picosecond infrared laser

We study gallium arsenide (GaAs) high voltage photoconductive switches triggered by a 30 ps neodymium: yttrium aluminium garnet (Nd:YAG) laser, i.e. using photons of energy smaller than the band gap. We measure optical absorption at Brewster incidence under optical pulse excitation and determine the extrinsic one photon and intrinsic two photon absorption coefficients. Analyzing the photoconductive resistance under different power densities of laser radiation, and using the absorption data, we demonstrate that only about 20% of the photons absorbed by the extrinsic process are converted into free electrons. We conclude that high efficiencies can only be obtained by using two photon absorption, which is feasible with ultrafast lasers and focussed beams.