Ideal static breakdown in high-voltage (1 kV) 4H-SiC p-n junction diodes with guard ring termination

被引：5
|
作者：
Ivanov, PA [1 ]
Grekhov, IV [1 ]
Il'inskaya, ND [1 ]
Samsonova, TP [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2005年 / 39卷 / 12期
关键词：
D O I：
10.1134/1.2140318
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Nearly "ideal" static high-voltage breakdown (1060 V) in 4H-SiC p(+)-n-n(+) diodes with guard ring termination is observed. At the doping level of 1.9 x 10(16) cm(-3) in the n-type base, the diode breakdown field is 2.7 x 10(6) V/cm. At the reverse bias as high as 1000 V, the leakage-current density does not exceed 5 x 10(-5) A/cm(2). The diodes withstand without degradation an avalanche-current density of 1 A/cm(2), which corresponds to the dissipated power of 1 kW/cm(2). (c) 2005 Pleiades Publishing, Inc.
引用
收藏
页码：1426 / 1428
页数：3
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