THE GUARD-RING TERMINATION FOR THE HIGH-VOLTAGE SIC SCHOTTKY-BARRIER DIODES

被引：38
|
作者：
UENO, K
URUSHIDANI, T
HASHIMOTO, K
SEKI, Y
机构：
[1] Fuji Electric Corporate Research and Development Ltd.
来源：
IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 07期
关键词：
D O I：
10.1109/55.388724
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this report, we propose the guard-ring structure as the edge termination for the high-voltage SiC Schottky barrier diodes. The local oxidation process is used to form the mesa of a p-n junction as the guard-ring. The comparison between the Al/Ti Schottky barrier diodes with and without the guard-ring indicates the effectiveness of the guard-ring to relax the electric field, from the results that the breakdown voltage is about two times larger with high yield.
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收藏
页码：331 / 332
页数：2
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