Guard-Ring Termination for High-Voltage SiC Schottky Barrier Diodes

被引:0
|
作者
机构
来源
Fuji Electric Review | / 42卷 / 174期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] THE GUARD-RING TERMINATION FOR THE HIGH-VOLTAGE SIC SCHOTTKY-BARRIER DIODES
    UENO, K
    URUSHIDANI, T
    HASHIMOTO, K
    SEKI, Y
    [J]. IEEE ELECTRON DEVICE LETTERS, 1995, 16 (07) : 331 - 332
  • [2] The guard-ring termination for 6H-SiC Schottky barrier diodes
    Ueno, K
    Urushidani, T
    Hashimoto, K
    Seki, Y
    [J]. SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 693 - 696
  • [3] Design and fabrication of planar guard ring termination for high-voltage SiC diodes
    Sheridan, DC
    Niu, GF
    Merrett, JN
    Cressler, JD
    Ellis, C
    Tin, CC
    [J]. SOLID-STATE ELECTRONICS, 2000, 44 (08) : 1367 - 1372
  • [4] Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes
    Horsfall, AB
    Vassilevski, KV
    Johnson, CM
    Wright, NG
    O'Neill, AG
    Gwilliam, RM
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1149 - 1152
  • [5] Simulation and fabrication of high-voltage 4H-SiC diodes with multiple floating guard ring termination
    Sheridan, DC
    Niu, G
    Merrett, JN
    Cressler, JD
    Ellis, C
    Tin, CC
    Siergiej, RR
    [J]. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1339 - 1342
  • [6] HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES
    RAGHUNATHAN, R
    ALOK, D
    BALIGA, BJ
    [J]. IEEE ELECTRON DEVICE LETTERS, 1995, 16 (06) : 226 - 227
  • [7] CHARACTERISTICS OF GAAS GUARD-RING DIODES
    BIARD, JR
    LEEZER, JF
    REED, BS
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (11) : 537 - &
  • [8] High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination
    P. A. Ivanov
    N. M. Lebedeva
    N. D. Il’inskaya
    M. F. Kudoyarov
    T. P. Samsonova
    O. I. Kon’kov
    Yu. M. Zadiranov
    [J]. Semiconductors, 2021, 55 : 243 - 249
  • [9] HIGH-PERFORMANCE OF HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES
    ITOH, A
    KIMOTO, T
    MATSUNAMI, H
    [J]. IEEE ELECTRON DEVICE LETTERS, 1995, 16 (06) : 280 - 282
  • [10] High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination
    Ivanov, P. A.
    Lebedeva, N. M.
    Il'inskaya, N. D.
    Kudoyarov, M. F.
    Samsonova, T. P.
    Kon'kov, O. I.
    Zadiranov, Yu. M.
    [J]. SEMICONDUCTORS, 2021, 55 (02) : 243 - 249