High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination

被引：0
|
作者：
P. A. Ivanov
N. M. Lebedeva
N. D. Il’inskaya
M. F. Kudoyarov
T. P. Samsonova
O. I. Kon’kov
Yu. M. Zadiranov
机构：
[1] Ioffe Institute,
来源：
Semiconductors | 2021年 / 55卷
关键词：
silicon carbide; Schottky diode; field plate; argon implantation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：243 / 249
页数：6
相关论文
共 50 条
  • [1] High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination
    Ivanov, P. A.
    Lebedeva, N. M.
    Il'inskaya, N. D.
    Kudoyarov, M. F.
    Samsonova, T. P.
    Kon'kov, O. I.
    Zadiranov, Yu. M.
    [J]. SEMICONDUCTORS, 2021, 55 (02) : 243 - 249
  • [2] Simulation research on offset field-plate used as edge termination in 4H-SiC merged PiN-Schottky diodes
    陈丰平
    张玉明
    张义门
    吕红亮
    宋庆文
    [J]. Chinese Physics B, 2010, 19 (04) : 396 - 399
  • [3] Simulation research on offset field-plate used as edge termination in 4H-SiC merged PiN-Schottky diodes
    Chen Feng-Ping
    Zhang Yu-Ming
    Zhang Yi-Men
    Lue Hong-Liang
    Song Qing-Wen
    [J]. CHINESE PHYSICS B, 2010, 19 (04)
  • [4] Design of field-plate terminated 4H-SiC Schottky diodes using high-κ dielectrics
    Kumta, A.
    Rusli
    Tin, Chin-Che
    Ahn, J.
    [J]. MICROELECTRONICS RELIABILITY, 2006, 46 (08) : 1295 - 1302
  • [5] HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES
    RAGHUNATHAN, R
    ALOK, D
    BALIGA, BJ
    [J]. IEEE ELECTRON DEVICE LETTERS, 1995, 16 (06) : 226 - 227
  • [6] Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
    Ivanov, P. A.
    Grekhov, I. V.
    Potapov, A. S.
    Il'inskaya, N. D.
    Kon'kov, O. I.
    Samsonova, T. P.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 877 - 880
  • [7] Excess leakage currents in high-voltage 4H-SiC Schottky diodes
    P. A. Ivanov
    I. V. Grekhov
    A. S. Potapov
    T. P. Samsonova
    N. D. Il’inskaya
    O. I. Kon’kov
    O. Yu. Serebrennikova
    [J]. Semiconductors, 2010, 44 : 653 - 656
  • [8] Excess leakage currents in high-voltage 4H-SiC Schottky diodes
    Ivanov, P. A.
    Grekhov, I. V.
    Potapov, A. S.
    Samsonova, T. P.
    Il'inskaya, N. D.
    Kon'kov, O. I.
    Serebrennikova, O. Yu.
    [J]. SEMICONDUCTORS, 2010, 44 (05) : 653 - 656
  • [9] Novel buried field rings edge termination for 4H-SiC high-voltage devices
    Mihaila, A
    Udrea, F
    Godignon, P
    Trajkovic, T
    Brezeanu, G
    Rebollo, J
    Millan, J
    [J]. SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 891 - 894
  • [10] High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension
    Ghandi, Reza
    Buono, Benedetto
    Domeij, Martin
    Malm, Gunnar
    Zetterling, Carl-Mikael
    Ostling, Mikael
    [J]. IEEE ELECTRON DEVICE LETTERS, 2009, 30 (11) : 1170 - 1172
12345