High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination

被引：0
|
作者：
P. A. Ivanov
N. M. Lebedeva
N. D. Il’inskaya
M. F. Kudoyarov
T. P. Samsonova
O. I. Kon’kov
Yu. M. Zadiranov
机构：
[1] Ioffe Institute,
来源：
Semiconductors | 2021年 / 55卷
关键词：
silicon carbide; Schottky diode; field plate; argon implantation;
D O I：
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学科分类号：
摘要：
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页码：243 / 249
页数：6
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