Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range

被引：0
|
作者：
A. A. Lebedev
V. V. Kozlovski
M. E. Levinshtein
D. A. Malevsky
R. A. Kuzmin
机构：
[1] Ioffe Institute,
[2] Peter the Great Saint-Petersburg Polytechnic University,undefined
来源：
Semiconductors | 2023年 / 57卷
关键词：
silicon carbide; Schottky diodes; electron irradiation; current-voltage characteristics; DLTS spectra;
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摘要：
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页码：239 / 243
页数：4
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