High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination

被引：0
|
作者：
P. A. Ivanov
N. M. Lebedeva
N. D. Il’inskaya
M. F. Kudoyarov
T. P. Samsonova
O. I. Kon’kov
Yu. M. Zadiranov
机构：
[1] Ioffe Institute,
来源：
Semiconductors | 2021年 / 55卷
关键词：
silicon carbide; Schottky diode; field plate; argon implantation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：243 / 249
页数：6
相关论文
共 50 条
  • [41] Design, fabrication and characterization of mesa combined with JTE termination for high-voltage 4H-SiC PiN diodes
    Deng, Xiaochuan
    Xiao, Han
    Wu, Jia
    Shen, Huajun
    Li, Chengzhan
    Tang, Yachao
    Zhang, Yourun
    Zhang, Bo
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2015, 88 : 167 - 173
  • [42] Buried field rings - A novel edge termination method for 4H-SiC high voltage devices
    Mihaila, A
    Udrea, F
    Godignon, P
    Trajkovic, T
    Brezeanu, G
    Rusu, A
    Rebollo, J
    Millan, J
    [J]. CAS: 2002 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2001, : 245 - 248
  • [43] Design, Fabrication, and Characterization of Ni/4H-SiC (0001) Schottky Diodes Array Equipped With Field Plate and Floating Guard Ring Edge Termination Structures
    Gupta, Sanjeev Kumar
    Pradhan, Nirmal
    Shekhar, Chandra
    Akhtar, Jamil
    [J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2012, 25 (04) : 664 - 672
  • [44] Simulation and fabrication of high voltage AlGaN/GaN based Schottky diodes with field plate edge termination
    Remashan, K.
    Huang, Wen-Pin
    Chyi, Jen-Inn
    [J]. MICROELECTRONIC ENGINEERING, 2007, 84 (12) : 2907 - 2915
  • [45] I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier
    P. A. Ivanov
    I. V. Grekhov
    O. I. Kon’kov
    A. S. Potapov
    T. P. Samsonova
    T. V. Semenov
    [J]. Semiconductors, 2011, 45 : 1374 - 1377
  • [46] Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes
    Fujiwara, H
    Kimoto, T
    Tojo, T
    Matsunami, H
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 151 - 154
  • [47] The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO2 interface
    Sheridan, DC
    Chung, GY
    Clark, S
    Cressler, JD
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) : 2229 - 2232
  • [48] I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier
    Ivanov, P. A.
    Grekhov, I. V.
    Kon'kov, O. I.
    Potapov, A. S.
    Samsonova, T. P.
    Semenov, T. V.
    [J]. SEMICONDUCTORS, 2011, 45 (10) : 1374 - 1377
  • [49] The response of high voltage 4H-SiC p-n junction diodes to different edge termination techniques
    Oder, TN
    Tin, CC
    Williams, JR
    Isaacs-Smith, T
    Madangarli, V
    Sudarshan, TS
    [J]. WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 101 - 106
  • [50] High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension
    Paques, Gontran
    Scharnholz, Sigo
    Dheilly, Nicolas
    Planson, Dominique
    De Doncker, Rik W.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) : 1421 - 1423
12345