Simulation research on offset field-plate used as edge termination in 4H-SiC merged PiN-Schottky diodes

被引：11
|
作者：
Chen Feng-Ping [1 ]
Zhang Yu-Ming [1 ]
Zhang Yi-Men [1 ]
Lue Hong-Liang [1 ]
Song Qing-Wen [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
来源：
CHINESE PHYSICS B | 2010年 / 19卷 / 04期
关键词：
4H-SiC; merged PiN-Schottky; offset field-plate; reverse characteristics;
D O I：
10.1088/1674-1056/19/4/047305
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A new structure of 4H-silicon carbide (SiC) merged PiN-Schottky (MPS) diodes with offset field-plate (FP) as edge termination is developed. To understand the influences of 4H-SiC MPS diodes with offset FP on the characteristics, simulations have been done by using ISE TCAD. Related factors of offset FP have been studied as well to optimise the reverse characteristics of 4H-SiC MPS diodes. The simulation results show that the device using offset FP can create a higher blocking voltage under reverse bias as compared with that using field guard rings. Besides, the offset FP does not cause any extra steps in the manufacture of MPS diodes.
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页数：4
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