Design rules for field plate edge termination in SiC Schottky diodes

被引：71
|
作者：
Tarplee, MC [1 ]
Madangarli, VP
Zhang, QC
Sudarshan, TS
机构：
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[2] York Tech Coll, Rock Hill, SC 29730 USA
[3] TestChip Technol Inc, Plano, TX 75074 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 12期
关键词：
avalanche breakdown; edge termination; field plate; Schottky diode;
D O I：
10.1109/16.974686
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Practical design of silicon carbide (SiC) Schottky diodes incorporating a field plate necessitates an understanding of how the addition of the field plate affects the performance parameters and the relationship between the diode structure and diode performance. In this paper, design rules are presented for SiC Schottky diodes that incorporate field plate edge termination. The use of an appropriate field plate edge termination can improve the reverse breakdown voltage of a SiC Schottky diode by a factor of two. Reverse breakdown voltage values can be obtained that are up to 88% of the theoretical maximums.
引用
收藏
页码：2659 / 2664
页数：6
相关论文
共 50 条
  • [1] Enhancement of breakdown voltage for Ni-SiC Schottky diodes utilizing field plate edge termination
    Ayalew, I
    Gehring, A
    Grasser, T
    Selberherr, S
    [J]. MICROELECTRONICS RELIABILITY, 2004, 44 (9-11) : 1473 - 1478
  • [2] High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination
    P. A. Ivanov
    N. M. Lebedeva
    N. D. Il’inskaya
    M. F. Kudoyarov
    T. P. Samsonova
    O. I. Kon’kov
    Yu. M. Zadiranov
    [J]. Semiconductors, 2021, 55 : 243 - 249
  • [3] High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination
    Ivanov, P. A.
    Lebedeva, N. M.
    Il'inskaya, N. D.
    Kudoyarov, M. F.
    Samsonova, T. P.
    Kon'kov, O. I.
    Zadiranov, Yu. M.
    [J]. SEMICONDUCTORS, 2021, 55 (02) : 243 - 249
  • [4] Field-plate design for edge termination in silicon carbide high-power Schottky diodes
    Mohammad, S. Noor
    Kub, Francis J.
    Eddy, Charles R., Jr.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (02):
  • [5] Design of edge termination for GaN power Schottky diodes
    Laroche, JR
    Ren, F
    Baik, KW
    Pearton, SJ
    Shelton, BS
    Peres, B
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (04) : 370 - 374
  • [6] Design of edge termination for GaN power Schottky diodes
    J. R. Laroche
    F. Ren
    K. W. Baik
    S. J. Pearton
    B. S. Shelton
    B. Peres
    [J]. Journal of Electronic Materials, 2005, 34 : 370 - 374
  • [7] Lateral current spreading in SiC Schottky diodes using field-prate edge termination
    Zhang, Q
    Madangarli, V
    Tarplee, M
    Sudarshan, TS
    [J]. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1223 - 1226
  • [8] Design, Fabrication, and Characterization of Ni/4H-SiC (0001) Schottky Diodes Array Equipped With Field Plate and Floating Guard Ring Edge Termination Structures
    Gupta, Sanjeev Kumar
    Pradhan, Nirmal
    Shekhar, Chandra
    Akhtar, Jamil
    [J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2012, 25 (04) : 664 - 672
  • [9] Simulation and fabrication of high voltage AlGaN/GaN based Schottky diodes with field plate edge termination
    Remashan, K.
    Huang, Wen-Pin
    Chyi, Jen-Inn
    [J]. MICROELECTRONIC ENGINEERING, 2007, 84 (12) : 2907 - 2915
  • [10] Development of 600 V/8 A SiC Schottky diodes with epitaxial edge termination
    Templier, F
    Ferret, P
    Di Cioccio, L
    Collard, E
    Lhorte, A
    Billon, T
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1161 - 1164
12345