Design rules for field plate edge termination in SiC Schottky diodes

被引：71
|
作者：
Tarplee, MC [1 ]
Madangarli, VP
Zhang, QC
Sudarshan, TS
机构：
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[2] York Tech Coll, Rock Hill, SC 29730 USA
[3] TestChip Technol Inc, Plano, TX 75074 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 12期
关键词：
avalanche breakdown; edge termination; field plate; Schottky diode;
D O I：
10.1109/16.974686
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Practical design of silicon carbide (SiC) Schottky diodes incorporating a field plate necessitates an understanding of how the addition of the field plate affects the performance parameters and the relationship between the diode structure and diode performance. In this paper, design rules are presented for SiC Schottky diodes that incorporate field plate edge termination. The use of an appropriate field plate edge termination can improve the reverse breakdown voltage of a SiC Schottky diode by a factor of two. Reverse breakdown voltage values can be obtained that are up to 88% of the theoretical maximums.
引用
收藏
页码：2659 / 2664
页数：6
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