Edge termination design improvements for 10 kV 4H-SiC bipolar diodes

被引：4
|
作者：
Nguyen, D. M. [1 ]
Huang, R. [1 ]
Phung, L. V. [1 ]
Planson, D. [1 ]
Berthou, M. [2 ]
Godignon, P. [2 ]
Vergne, B. [3 ]
Brosselard, P. [1 ]
机构：
[1] Univ Lyon, INSA Lyon, Ampere Lab, F-69621 Villeurbanne, France
[2] SNM IMB CSIC, E-08193 Barcelona, Spain
[3] French German Res Inst St Louis, F-68300 St Louis, France
来源：
SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷
关键词：
4H-SiC; bipolar diode; edge termination; MESA; JTE; breakdown voltage; device simulation; PIN DIODES;
D O I：
10.4028/www.scientific.net/MSF.740-742.609
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
10 kV class 4H-SiC bipolar diodes have been fabricated. Two different edge terminations (Mesa/JTE or MESA/JTE with JTE rings) with two different junction bend radius have been designed and tested. Measurement results show that the inclusion of JTE rings improve the edge termination efficiency. The measurements indicate also a better reverse performance of diodes with larger bend radius.
引用
收藏
页码：609 / +
页数：2
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