Development of 10 kV 4H-SiC JBS diode with FGR termination

被引：6

作者：

Huang Runhua ^{[2
]}

Tao Yonghong ^{[2
]}

Cao Pengfei ^{[2
]}

Wang Ling ^{[2
]}

Chen Gang ^{[1
]}

Bai Song ^{[1
]}

Li Rui ^{[2
]}

Li Yun ^{[1
]}

Zhao Zhifei ^{[1
]}

机构：

[1] Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Peoples R China

[2] Nanjing Elect Devices Inst, Nanjing 210016, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2014年 / 35卷 / 07期

关键词：

4H-SiC; JBS diodes; edge termination; floating guard rings;

D O I：

10.1088/1674-4926/35/7/074005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The design, fabrication, and electrical characteristics of the 4H-SiC JBS diode with a breakdown voltage higher than 10 kV are presented. 60 floating guard rings have been used in the fabrication. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The n-type epilayer is 100 mu m in thickness with a doping of 6 x 10(14) cm(-3). The on-state voltage was 2.7 V at J(F) = 13 A/cm(2)

引用

页数：4

共 50 条

[1] Development of 10 kV 4H-SiC JBS diode with FGR termination
黄润华
陶永洪
曹鹏飞
汪玲
陈刚
柏松
栗瑞
李赟
赵志飞
[J]. Journal of Semiconductors, 2014, (07) : 60 - 63
[2] Development of 10 kV 4H-SiC JBS diode with FGR termination
黄润华
陶永洪
曹鹏飞
汪玲
陈刚
柏松
栗瑞
李赟
赵志飞
[J]. Journal of Semiconductors., 2014, 35 (07) - 63
[3] A 2.7 kV 4H-SiC JBS Diode
HUANG Run-hua
LI Rui
CHEN Gang
LI Yun
[J]. 电力电子技术, 2012, 46 (12) : 72 - 73
[4] 3.3 kV 4H-SiC JBS diodes with single-zone JTE termination
Pan, Yan
Tian, Liang
Wu, Hao
Li, Yongping
Yang, Fei
[J]. MICROELECTRONIC ENGINEERING, 2017, 181 : 10 - 15
[5] The Optimization of 3.3 kV 4H-SiC JBS Diodes
Renz, Arne Benjamin
Shah, Vishal Ajit
Vavasour, Oliver James
Baker, Guy William Clarke
Bonyadi, Yegi
Sharma, Yogesh
Pathirana, Vasantha
Trajkovic, Tanya
Mawby, Phil
Antoniou, Marina
Gammon, Peter Michael
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (01) : 298 - 303
[6] Development of 17 kV 4H-SiC PiN diode
黄润华
陶永洪
汪玲
陈刚
柏松
栗锐
李赟
赵志飞
[J]. Journal of Semiconductors, 2016, (08) : 49 - 52
[7] Development of 17 kV 4H-SiC PiN diode
Huang Runhua
Tao Yonghong
Wang Ling
Chen Gang
Bai Song
Li Rui
Lu Yun
Zhao Zhifei
[J]. JOURNAL OF SEMICONDUCTORS, 2016, 37 (08)
[8] Development of 17 kV 4H-SiC PiN diode
黄润华
陶永洪
汪玲
陈刚
柏松
栗锐
李赟
赵志飞
[J]. Journal of Semiconductors., 2016, 37 (08) - 52
[9] Development of 6.5kV 50A 4H-SiC JBS diodes
Chen, Yunfeng
Tan, Ji
Bai, Song
Huang, Runhua
Li, Rui
[J]. 2018 15TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING: INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS), 2018, : 120 - 122
[10] Simulation and Characterization of Ion Irradiated 4H-SiC JBS Diode
Sharma, Rupendra Kumar
Hazdra, Pavel
Popelka, Stanislav
[J]. 2015 22ND INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS & SYSTEMS (MIXDES), 2015, : 567 - 570

← 1 2 3 4 5 →