A 2.7 kV 4H-SiC JBS Diode

被引：0

作者：

HUANG Run-hua ^{[1
]}

LI Rui ^{[1
]}

CHEN Gang ^{[1
]}

LI Yun ^{[1
]}

机构：

[1] The 55th Research Institute of China Electronics Technology Group Corporation

来源：

电力电子技术 | 2012年 / 46卷 / 12期

关键词：

4H silicon carbide; junction barrier Schottky diode; edge termination; floating guard rings;

D O I：

暂无

中图分类号：

TN304 [材料];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

4H silicon carbide（4H-SiC） junction barrier Schottky（JBS） diode with breakdown voltage higher than 2.7 kV and active area of 2.8 mm;has been successfully fabricated.The design,the fabrication,and the electrical characteristics are reported.Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique.The epilayer properties of the N-type are 18μm with a doping of 3.5×10;cm;.The diodes are fabricated with a floating guard rings edge termination.The on-state voltage is 2.15 V at J;=350 A·cm;.

引用

页码：72 / 73

页数：2