Design, fabrication and characterization of 5 kV 4H-SiC p+n planar bipolar diodes protected by junction termination extension

被引：7
|
作者：
Raynaud, C [1 ]
Lazar, M [1 ]
Planson, D [1 ]
Chante, JP [1 ]
Sassi, Z [1 ]
机构：
[1] INSA, CNRS, UMR 5005, CEGELY, F-69621 Villeurbanne, France
来源：
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | 2004年 / 457-460卷
关键词：
4H-SiC; bipolar diodes; breakdown voltage;
D O I：
10.4028/www.scientific.net/MSF.457-460.1033
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High voltage 4H-SiC bipolar diodes have been realized using a 40 mum thick n-type epilayer, with a doping level at 1.1x10(15) cm(-3). These diodes have been designed with only one Junction Termination Extension as edge termination, whereas previous high voltage diodes described in literature are protected either by mesa either by a combination of JTE and mesa. Current voltage measurements show best breakdown voltage V-br at 4.8 kV when testing in Galden(R). After cutting the wafer into pieces (similar to5x5 mm(2)), V-br values seem to be reduced (similar to3.7 kV) and are in the same range both in Galden(R) and in SF6. In forward bias, the current density is found in the range of 100 A.cm(-2) at 5 V, but decreases rapidly when duration of bias increases.
引用
收藏
页码：1033 / 1036
页数：4
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