Research on high-voltage 4H-SiC P-i-N diode with planar edge junction termination techniques

被引：0
|
作者：
张发生 [1 ,2 ]
李欣然 [2 ]
机构：
[1] School of Computer and Information Engineering, Central South University of Forestry and Technology
[2] College of Electrical and Information Engineering, Hunan University
来源：
Chinese Physics B | 2011年 / 20卷 / 06期
关键词：
silicon carbide; P–i–N diode; junction termination technique; simulation; breakdown voltage;
D O I：
暂无
中图分类号：
TN312.4 [];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
The planar edge termination techniques of junction termination extension (JTE) and offset field plates and field-limiting rings for the 4H-SiC P-i-N diode were investigated and optimized by using a two-dimensional device simulator ISE-TCAD10.0. By experimental verification, a good consistency between simulation and experiment can be observed. The results show that the reverse breakdown voltage for the 4H-SiC P-i-N diode with optimized JTE edge termination can accomplish near ideal breakdown voltage and much lower leakage current. The breakdown voltage can be near 1650 V, which achieves more than 90 percent of ideal parallel plane junction breakdown voltage and the leakage current density can be near 3 × 10-5 A/cm2.
引用
收藏
页码：370 / 375
页数：6
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