Research on high-voltage 4H-SiC P-i-N diode with planar edge junction termination techniques

被引：4
|
作者：
Zhang Fa-Sheng [1 ,2 ]
Li Xin-Ran [2 ]
机构：
[1] Cent S Univ Forestry & Technol, Sch Comp & Informat Engn, Changsha 410004, Hunan, Peoples R China
[2] Hunan Univ, Coll Elect & Informat Engn, Changsha 410082, Hunan, Peoples R China
来源：
CHINESE PHYSICS B | 2011年 / 20卷 / 06期
关键词：
silicon carbide; P-i-N diode; junction termination technique; simulation; breakdown voltage; FIELD PLATE; BREAKDOWN VOLTAGE; SCHOTTKY DIODES; IONIZATION; RING;
D O I：
10.1088/1674-1056/20/6/067102
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The planar edge termination techniques of junction termination extension (JTE) and offset field plates and field-limiting rings for the 4H-SiC P-i-N diode were investigated and optimized by using a two-dimensional device simulator ISE-TCAD10.0. By experimental verification, a good consistency between simulation and experiment can be observed. The results show that the reverse breakdown voltage for the 4H-SiC P-i-N diode with optimized JTE edge termination can accomplish near ideal breakdown voltage and much lower leakage current. The breakdown voltage can be near 1650 V, which achieves more than 90 percent of ideal parallel plane junction breakdown voltage and the leakage current density can be near 3 x 10(-5) A/cm(2).
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页数：6
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