Peculiarities of the temperature behavior of SOI MOSFETs in the deep submicron area

被引：0
|
作者：
Vancaillie, L [1 ]
Kilchytska, V [1 ]
Delatte, P [1 ]
Demeûs, L [1 ]
Matsuhashi, H [1 ]
Ichikawa, F [1 ]
Flandre, D [1 ]
机构：
[1] Univ Catholique Louvain, Microelect Lab, Louvain, Belgium
来源：
2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：78 / 79
页数：2
相关论文
共 50 条
  • [41] The STI stress effect on deep submicron PDSOI MOSFETs
    Bu Jianhui
    Li Shuzhen
    Luo Jiajun
    Han Zhengsheng
    JOURNAL OF SEMICONDUCTORS, 2014, 35 (03)
  • [42] An improved substrate current model for deep submicron MOSFETs
    Li, W
    Yuan, JS
    Chetlur, S
    Zhou, J
    Oates, AS
    SOLID-STATE ELECTRONICS, 2000, 44 (11) : 1985 - 1988
  • [43] A simple model for channel noise of deep submicron MOSFETs
    Lu, Z. Q.
    Ye, Y. Z.
    2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGS, 2005, : 309 - 312
  • [44] Analytical modeling of thermal noise in deep submicron MOSFETs
    Lu, Zhi-Qiang
    Lai, Feng-Chang
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2009, 59 (02) : 185 - 189
  • [45] REALIZATION OF DEEP-SUBMICRON MOSFETS BY LATERAL ETCHING
    BURMESTER, R
    WINNERL, J
    NEPPL, F
    MICROELECTRONIC ENGINEERING, 1991, 13 (1-4) : 473 - 476
  • [46] Scaling of InGaAs MOSFETs into deep-submicron regime
    Wu, Y. Q.
    Gu, J. J.
    Ye, P. D.
    2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2010,
  • [47] Analysis of the Drain Thermal Noise for Deep Submicron MOSFETs
    Ji, Yuancheng
    Nan, Lan
    Mouthaan, Koen
    APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5, 2009, : 1659 - 1662
  • [48] Gate length dependence of bias temperature instability behavior in short channel SOI MOSFETs
    Wu, Wangran
    Lu, J.
    Liu, Chang
    Wu, Heng
    Tang, Xiaoyu
    Sun, Jiabao
    Zhang, Rui
    Yu, Wenjie
    Wang, Xi
    Zhao, Yi
    MICROELECTRONICS RELIABILITY, 2016, 62 : 79 - 81
  • [49] Scaling effects on deep-submicron vertical MOSFETs
    Ahmadi, A
    Rowlands, DD
    Alam, K
    MICROELECTRONICS: DESIGN, TECHNOLOGY, AND PACKAGING II, 2006, 6035
  • [50] Direct Tunneling gate current in deep submicron MOSFETs
    Zaman, S
    Haque, A
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 742 - 745
12345