Scaling of InGaAs MOSFETs into deep-submicron regime

We have demonstrated high-performance deep-submicron inversion-mode InGaAs MOSFETs with gate lengths down to 150 nm with record Gm exceeding 1.1 mS/mu m. Oxide thickness scaling is performed to improve the on-state/off-state performance and Gm is further improved to 1.3 mS/mu m. HBr pre-cleaning, retro-grade structure and halo-implantation processes are first time introduced into III-V MOSFETs to steadily improve high-k/InGaAs interface quality and on-state/off-state performance of the devices. We have also demonstrated the first well-behaved inversion-mode InGaAs FinFET with ALD Al2O3 as gate dielectric using novel damage-free etching techniques. Detailed analysis of SS, DIBL and V-T roll-off are carried out on FinFETs with L-ch down to 100 nm and W-Fin down to 40 nm. The short-channel effect (SCE) of planar InGaAs MOSFETs is greatly improved by the 3D structure design. The result confirms that the newly developed dry/wet etching process produces damage-free InGaAs sidewalls and the high-k/3D InGaAs interface is comparable to the 2D case. Finally, ultra-shallow doping for V-T adjustment in deep submicron InGaAs MOSFETs using sulfur monolayers is demonstrated. This brings new potential solution to ultra-shallow junction formation for the further scaling of III-V MOSFETs.